| CPC H01L 27/14636 (2013.01) [H01L 27/14634 (2013.01); H04N 25/75 (2023.01); H04N 25/778 (2023.01); H04N 25/79 (2023.01)] | 18 Claims |
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1. An imaging element, comprising:
a first section including a first semiconductor substrate, the first semiconductor substrate including a photoelectric converter and a floating diffusion;
a second section including an insulating layer and a second semiconductor substrate, the second semiconductor substrate including a readout circuit for reading out a pixel signal from the floating diffusion, wherein the readout circuit comprises:
a first transistor at least partially disposed in the second semiconductor substrate; and
a second transistor at least partially disposed in the second semiconductor substrate; and
a third section including a third semiconductor substrate, the third semiconductor substrate including a logic circuit for processing the pixel signal, wherein the second section is sandwiched between the first section and the third section; and
a through electrode that penetrates through the insulating layer and electrically connects the floating diffusion to the readout circuit, wherein the through electrode is between the first transistor and the second transistor, and wherein the second semiconductor substrate comprises a first semiconductor region and a second semiconductor region electrically isolated from the first semiconductor region by the insulating layer.
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