| CPC H10F 39/8067 (2025.01) [H10F 39/011 (2025.01); H10F 39/024 (2025.01); H10F 39/18 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01)] | 20 Claims |
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1. A structure for a photodetector, the structure comprising:
a first semiconductor layer including a p-n junction;
a second semiconductor layer having an interface with the first semiconductor layer; and
a deep trench isolation region in a trench with a plurality of sidewalls extending fully through the first semiconductor layer and the second semiconductor layer, the deep trench isolation region including a first plurality of layers and a second plurality of layers positioned in the trench, the second plurality of layers alternating with the first plurality of layers to define a Bragg mirror, the first plurality of layers comprising a first material having a first refractive index, and the second plurality of layers comprising a second material having a second refractive index that is greater than the first refractive index,
wherein each of the first plurality of layers includes a first portion extending down the plurality of sidewalls of the trench and a second portion extending across the trench to provide a first U-shape, and each of the second plurality of layers includes a first portion extending down the plurality of sidewalls of the trench and a second portion extending across the trench to provide a second U-shape.
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