US 12,266,657 B2
Hybrid cell-based device, layout, and method
Yu-Xuan Huang, Hsinchu (TW); Shih-Wei Peng, Hsinchu (TW); Te-Hsin Chiu, Hsinchu (TW); Hou-Yu Chen, Hsinchu (TW); Kuan-Lun Cheng, Hsinchu (TW); and Jiann-Tyng Tzeng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Oct. 26, 2021, as Appl. No. 17/452,338.
Claims priority of provisional application 63/188,329, filed on May 13, 2021.
Prior Publication US 2022/0367460 A1, Nov. 17, 2022
Int. Cl. H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01)
CPC H01L 27/0922 (2013.01) [H01L 21/823892 (2013.01); H01L 23/5286 (2013.01); H01L 27/0207 (2013.01); H01L 27/092 (2013.01); H01L 27/0928 (2013.01); H01L 21/823871 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) device comprising:
a first plurality of active areas extending in a first direction and having a first pitch in a second direction perpendicular to the first direction; and
a second plurality of active areas extending in the first direction, offset from the first plurality of active areas in the first direction, and having a second pitch in the second direction,
wherein
the first plurality of active areas comprises one or more pairs of adjacent p-type active areas alternating with one or more pairs of adjacent n-type active areas, each p-type active area and each n-type active area of the first plurality of active areas thereby being adjacent to both a p-type active area and an n-type active area, and
a ratio of the second pitch to the first pitch is 3:2.