US 12,266,654 B2
FinFET devices and methods of forming the same
Kuo-Cheng Ching, Hsinchu County (TW); Chih-Hao Wang, Hsinchu County (TW); Huan-Chieh Su, Changhua County (TW); Mao-Lin Huang, Hsinchu (TW); and Zhi-Chang Lin, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 11, 2018, as Appl. No. 16/215,676.
Claims priority of provisional application 62/712,236, filed on Jul. 31, 2018.
Prior Publication US 2020/0043919 A1, Feb. 6, 2020
Int. Cl. H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/28114 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 21/823481 (2013.01); H01L 29/41791 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/4991 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A FinFET device, comprising:
a substrate having fins;
a metal gate strip disposed across the fins and having a reversed T-shaped portion in a cross section cut between two adjacent fins along an extension direction of the fins, wherein a portion of the reversed T-shaped portion is embedded between the two adjacent fins;
multiple gate spacers disposed on a first sidewall of the metal gate strip;
a T-shaped dielectric helmet disposed over the metal gate strip;
an interfacial layer disposed below the multiple gate spacers, wherein laterally opposite sidewalls of the interfacial layer are flush with sidewalls of the multiple gate spacers; and
an etch stop layer disposed on the first sidewall of the metal gate strip covering the multiple gate spacers, wherein outer sidewalls of the T-shaped dielectric helmet are flush with sidewalls of the etch stop layer.