US 12,266,651 B2
Electrostatic discharge protection structure
Chang-Min Lin, Taichung (TW); Chih-Hsuan Lin, Hsinchu (TW); Yeh-Ning Jou, Hsinchu (TW); Hwa-Chyi Chiou, Hsinchu (TW); and Jian-Hsing Lee, Hsinchu (TW)
Assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu (TW)
Filed by Vanguard International Semiconductor Corporation, Hsinchu (TW)
Filed on Apr. 20, 2022, as Appl. No. 17/724,700.
Prior Publication US 2023/0343780 A1, Oct. 26, 2023
Int. Cl. H01L 27/02 (2006.01)
CPC H01L 27/0296 (2013.01) [H01L 27/0266 (2013.01)] 13 Claims
OG exemplary drawing
 
1. An electrostatic discharge (ESD) protection structure comprising:
a P-type substrate;
a first P-type structure formed in the P-type substrate and served as an electrical contact of the P-type substrate;
an N-type buried layer formed in the P-type substrate;
an element active region formed on the N-type buried layer;
a P-type guard ring formed on the N-type buried layer and surrounding the element active region; and
a first N-type structure formed on the N-type buried layer and disposed between the P-type guard ring and the first P-type structure,
wherein the first P-type structure surrounds the first N-type structure.