US 12,266,644 B2
Semiconductor package device method of manufacturing the same
Chang-Yu Lin, Kaohsiung (TW); Chi-Han Chen, Kaohsiung (TW); and Chieh-Chen Fu, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Feb. 8, 2021, as Appl. No. 17/170,666.
Application 17/170,666 is a continuation of application No. 16/236,186, filed on Dec. 28, 2018, granted, now 10,930,627.
Prior Publication US 2021/0167053 A1, Jun. 3, 2021
Int. Cl. H01L 25/16 (2023.01); H01L 23/538 (2006.01); H01L 33/52 (2010.01); H01L 33/58 (2010.01); G02B 6/42 (2006.01)
CPC H01L 25/167 (2013.01) [H01L 23/5384 (2013.01); H01L 33/52 (2013.01); H01L 33/58 (2013.01); G02B 6/4206 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device package, comprising:
a first semiconductor device having a first surface and a second surface opposite to the first surface, wherein the first semiconductor device is substantially transmissive to a first light;
a light emitting device disposed over the second surface of the first semiconductor device;
a multilayer structure disposed under the first surface of the first semiconductor device and having an opening vertically overlapping the first semiconductor device and the light emitting device,
wherein the opening is configured to allow a second light to pass substantially vertically through the first semiconductor device and towards the light emitting device.