US 12,266,627 B2
Semiconductor device and method for manufacturing the same
Shinji Sakai, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Jun. 29, 2022, as Appl. No. 17/853,813.
Claims priority of application No. 2021-175883 (JP), filed on Oct. 27, 2021.
Prior Publication US 2023/0132056 A1, Apr. 27, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01)
CPC H01L 24/32 (2013.01) [H01L 21/4825 (2013.01); H01L 21/4839 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 23/49861 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/48 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/32013 (2013.01); H01L 2224/32057 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8384 (2013.01); H01L 2924/182 (2013.01); H01L 2924/186 (2013.01); H01L 2924/351 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a die pad having a conductive property;
a semiconductor chip;
a back surface electrode formed on a back surface of the semiconductor chip;
an Ag bonding material containing 50 to 85% Ag and bonding the back surface electrode and the die pad;
a terminal connected to the semiconductor chip; and
sealing resin having an insulating property and covering the die pad, the semiconductor chip, the Ag bonding material, and a part of the terminal,
wherein a distal end of the terminal protruding from the sealing resin includes a substrate bonding surface,
a metal burr protrudes from a peripheral portion on a lower surface of the back surface electrode contacting the Ag bonding material, and
a thickness of the Ag bonding material is larger than a height in an up-down direction of the metal burr by 2 μm or more.