US 12,266,626 B2
Radar device
Shuji Hirata, Kariya (JP); Akira Shintai, Kariya (JP); Atsushi Munaoka, Kariya (JP); Masahiro Matsunoshita, Kariya (JP); and Yusuke Tainaka, Kariya (JP)
Assigned to DENSO CORPORATION, Kariya (JP)
Filed by DENSO CORPORATION, Kariya (JP)
Filed on May 27, 2022, as Appl. No. 17/826,418.
Application 17/826,418 is a continuation of application No. PCT/JP2020/040344, filed on Oct. 28, 2020.
Claims priority of application No. 2019-215960 (JP), filed on Nov. 29, 2019.
Prior Publication US 2022/0285308 A1, Sep. 8, 2022
Int. Cl. H01L 23/00 (2006.01); G01S 7/03 (2006.01); G01S 13/931 (2020.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01Q 1/38 (2006.01)
CPC H01L 24/32 (2013.01) [G01S 7/03 (2013.01); G01S 13/931 (2013.01); H01L 23/3107 (2013.01); H01L 23/49838 (2013.01); H01L 24/73 (2013.01); H01L 2224/32058 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73203 (2013.01); H01Q 1/38 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A radar device comprising:
a substrate including a plurality of conductor layers arranged on a front surface or a rear surface, the plurality of conductor layers comprising a plurality of high-frequency conductor layers for transferring a high frequency signal;
a semiconductor component facing the front surface of the substrate, being in contact with the plurality of conductor layers on the substrate via conductive members, and configured to generate a high frequency signal; and
an adhesive configured to bond the semiconductor component to the front surface of the substrate, wherein
the semiconductor component has a bottom surface and a plurality of side surfaces including a first side surface facing in a first direction from a central portion to an edge in a plane of the front surface or the rear surface of the substrate,
all the plurality of high-frequency conductor layers or a high-frequency conductor layer set included in the plurality of high-frequency conductor layers includes at least high-frequency conductor layers that bend in the plane of the front surface or the rear surface of the substrate and thereby extends, on the front surface or the rear surface of the substrate, from inside ends facing the bottom surface of the semiconductor component to outside ends positioned in the first direction from the first side surface of the semiconductor component, and
the adhesive is in contact with the front surface of the substrate except for sites of the plurality of high-frequency conductor layers formed and in contact with the plurality of side surfaces of the semiconductor component.