US 12,266,620 B2
Manufacturing method of flip chip package structure
Shiann-Tsong Tsai, Taipei (TW); Yang-Ming Shih, Taipei (TW); and Hung-Yun Hsu, Taipei (TW)
Assigned to AMAZING COOL TECHNOLOGY CORP., Taipei (TW)
Filed by AMAZING COOL TECHNOLOGY CORP., Taipei (TW)
Filed on Feb. 29, 2024, as Appl. No. 18/592,048.
Application 18/592,048 is a division of application No. 17/674,312, filed on Feb. 17, 2022, granted, now 11,955,443.
Prior Publication US 2024/0203914 A1, Jun. 20, 2024
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/03 (2013.01) [H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/03826 (2013.01); H01L 2224/03831 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13611 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/014 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A manufacturing method of a flip chip package structure, the manufacturing method comprising:
a) providing at least one silicon substrate, wherein the silicon substrate comprises a connecting surface, and the connecting surface is attached with at least one conductive base;
b) covering the conductive base with a graphene copper layer;
c) laminating a photoresist layer on the connecting surface and etching the photoresist layer to form a cavity corresponding to the conductive base in position, wherein a part of the graphene copper layer corresponding to the conductive base is exposed on a bottom of the cavity;
d) electroplating a copper material on the graphene copper layer, wherein the copper material is accumulated in the cavity to form a copper pillar; and
e) removing the photoresist layer and the graphene copper layer covered by the photoresist layer.