US 12,266,618 B2
Semiconductor device and method of manufacturing the same
Jenchun Chen, Kaohsiung (TW); and Shyue-Long Louh, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Feb. 18, 2022, as Appl. No. 17/676,086.
Prior Publication US 2023/0268295 A1, Aug. 24, 2023
Int. Cl. H01L 23/66 (2006.01); H01L 23/498 (2006.01); H01L 23/552 (2006.01); H01Q 1/22 (2006.01); H01L 21/56 (2006.01); H01L 25/16 (2023.01); H01Q 1/38 (2006.01)
CPC H01L 23/66 (2013.01) [H01L 23/49816 (2013.01); H01L 23/552 (2013.01); H01Q 1/2283 (2013.01); H01L 21/565 (2013.01); H01L 25/165 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6677 (2013.01); H01L 2223/6688 (2013.01); H01Q 1/38 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a carrier having a first side and a second side opposite to the first side;
a first antenna array disposed over the first side and configured to operate at a first frequency; and
a second antenna array disposed under the second side and configured to operate at a second frequency different from the first frequency;
a conductive element disposed over the first side of the carrier, wherein the first antenna array is electrically connected to the conductive element by a solder material.