US 12,266,615 B2
Selective EMI shielding using preformed mask with fang design
ChangOh Kim, Incheon (KR); KyoungHee Park, Seoul (KR); JinHee Jung, Incheon (KR); OMin Kwon, Gyeonggi-do (KR); JiWon Lee, Seoul (KR); and YuJeong Jang, Incheon (KR)
Assigned to STATS ChipPAC Pte. Ltd., (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Feb. 27, 2023, as Appl. No. 18/174,790.
Application 18/174,790 is a division of application No. 17/126,621, filed on Dec. 18, 2020, granted, now 11,616,025.
Prior Publication US 2023/0207485 A1, Jun. 29, 2023
Int. Cl. H01L 23/552 (2006.01); H01L 21/033 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/0334 (2013.01); H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 24/13 (2013.01); H01L 2924/15313 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor package including,
a substrate comprising a land grid array,
a component disposed over the substrate, and
an encapsulant deposited over the component, wherein the land grid array is disposed outside the encapsulant;
a fanged metal mask disposed over the land grid array, wherein the fanged metal mask includes a front surface oriented toward the encapsulant, a first fang extending from the front surface toward the encapsulant at a first side of the front surface, and a second fang extending from the front surface toward the encapsulant at a second side of the front surface; and
a shielding layer formed over the semiconductor package and fanged metal mask.