| CPC H01L 23/5383 (2013.01) [H01L 23/5386 (2013.01); H01L 25/0657 (2013.01)] | 19 Claims |
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1. A semiconductor package comprising:
a first semiconductor chip which includes a first semiconductor substrate, and a first bonding layer on the first semiconductor substrate;
a second semiconductor chip and a third semiconductor chip which are each stacked on the first semiconductor chip and spaced apart from each other;
the second semiconductor chip which includes a second semiconductor substrate, a second bonding layer bonded to the first bonding layer on the second semiconductor substrate, and a chip through via which penetrates the second semiconductor substrate and is connected to the second bonding layer;
a passivation film which extends along upper sides of the second semiconductor chip and the third semiconductor chip and does not extend along side faces of the second semiconductor chip or along side faces of the third semiconductor chip and through which the chip through via penetrates; and
a multiple fill film which extends along an upper side of the first semiconductor chip, the side faces of the second semiconductor chip and the third semiconductor chip, and the side faces of the passivation film, wherein
the multiple fill film includes an inorganic filling film and an organic filling film which are sequentially stacked on the first semiconductor chip,
wherein upper sides of the passivation film, the inorganic filling film, and the organic filling film are along the same plane.
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