| CPC H01L 23/53266 (2013.01) [H01L 21/02183 (2013.01); H01L 21/0228 (2013.01); H01L 21/76807 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76849 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01)] | 18 Claims |
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1. An interconnect structure, comprising:
a metal line embedded in a dielectric;
an interlayer dielectric (ILD) disposed over the metal line;
a first interconnect formed in the ILD on top of the metal line, wherein:
the first interconnect directly contacts the metal line;
the first interconnect comprises a plurality of vias; and
all sidewalls of the plurality of vias are parallel to one another;
a barrier layer separating the first interconnect from the ILD;
a selective capping layer disposed on the first interconnect;
a blanket capping layer disposed (i) on the selective capping layer and the ILD and (ii) over the first interconnect and a second interconnect, wherein:
the selective capping layer and the blanket capping layer are different materials; and
top surfaces of the selective capping layer and the ILD are coplanar; and
a second plurality of vias passing through the blanket capping layer and the selective capping layer, wherein the second plurality of vias directly contact the first interconnect.
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