US 12,266,587 B2
Semiconductor device and method for advanced thermal dissipation
SeungHyun Lee, Incheon (KR); and HeeSoo Lee, Incheon (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Jun. 8, 2022, as Appl. No. 17/805,951.
Prior Publication US 2023/0402343 A1, Dec. 14, 2023
Int. Cl. H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/3675 (2013.01) [H01L 23/373 (2013.01); H01L 23/5225 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a semiconductor die over the substrate;
disposing a tape over the semiconductor die;
depositing an encapsulant over the substrate, semiconductor die, and tape;
removing the tape to leave a cavity in the encapsulant over the semiconductor die;
forming a shielding layer over the encapsulant and semiconductor die; and
disposing a heat spreader over the shielding layer, wherein the heat spreader includes a protrusion extending into the cavity of the encapsulant.