US 12,266,581 B2
Electronic substrates having heterogeneous dielectric layers
Joshua Stacey, Chandler, AZ (US); Whitney Bryks, Tempe, AZ (US); Sarah Blythe, Chandler, AZ (US); Peumie Abeyratne Kuragama, Chandler, AZ (US); and Junxin Wang, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Oct. 30, 2020, as Appl. No. 17/085,177.
Prior Publication US 2022/0139792 A1, May 5, 2022
Int. Cl. H01L 23/18 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/295 (2013.01) [H01L 23/18 (2013.01); H01L 23/31 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a substrate comprising a dielectric material layer having a first conductive trace on a top surface thereof;
a multilayer dielectric over the dielectric material layer and the first conductive trace, the multilayer dielectric comprising:
a first layer on the dielectric material layer and the first conductive trace, wherein the first layer has a thickness of not more than 5 microns and is a material selected from the group consisting of epoxy resin, perfluorocyclobutane resin, and perfluorinated alkyl resin;
a second layer on the first layer; and
a third layer on the second layer, wherein the third layer has a thickness of not more than 5 microns and comprises a first carrier material with a first filler material dispersed therein, the first filler material having a volume percentage of not more than 50% of the third layer, and
wherein the second layer is thicker than each of the first layer and the third layer and comprises a second carrier material with a second filler material dispersed therein, the second filler material being a greater volume percentage of the second layer than the volume percentage of the first filler material of the third layer;
a second conductive trace on a top surface of the third layer; and
a conductive via extending through the first layer, the second layer, and the third layer and in contact with a top surface of the first conductive trace and a bottom surface of the second conductive trace.
 
8. An apparatus, comprising:
a substrate comprising a dielectric material layer having a first conductive trace on a top surface thereof;
a multilayer dielectric over the dielectric material layer and the first conductive trace, the multilayer dielectric comprising:
a first layer on the dielectric material layer and the first conductive trace, wherein the first layer has a thickness of not more than 5 microns and comprises a first carrier material with a first filler material dispersed therein, the first filler material having a volume percentage of not more than 50% of the first layer;
a second layer on the first layer, wherein the second layer comprises a second carrier material with a second filler material dispersed therein; and
a third layer on the second layer, wherein the third layer has a thickness of not more than 5 microns and comprises a third carrier material with a third filler material dispersed therein, the third filler material having a volume percentage of not more than 50% of the third layer, and
wherein the second layer is thicker than each of the first layer and the third layer, and the second filler material has a greater volume percentage of the second layer than each of the volume percentage of the first filler material of the first layer and the volume percentage of the third filler material of the third layer;
a second conductive trace on a top surface of the third layer; and
a conductive via extending through the first layer, the second layer, and the third layer and in contact with a top surface of the first conductive trace and a bottom surface of the second conductive trace.
 
14. An apparatus, comprising:
a substrate comprising a dielectric material layer having a first conductive trace on a top surface thereof;
a multilayer dielectric over the dielectric material layer and the first conductive trace, the multilayer dielectric comprising:
a first layer on the dielectric material layer and the first conductive trace, wherein the first layer has a thickness of not more than 5 microns and comprises a first carrier material with a first filler material dispersed therein, the first filler material having a volume percentage of not more than 50% of the first layer and having an average diameter on the nanometer level;
a second layer on the first layer, wherein the second layer comprises a second carrier material with a second filler material dispersed therein, the second filler material having an average diameter on the micrometer level; and
a third layer on the second layer, wherein the third layer has a thickness of not more than 5 microns and comprises a third carrier material with a third filler material dispersed therein, the third filler material having a volume percentage of not more than 50% of the third layer, and
wherein the second layer is thicker than each of the first layer and the third layer;
a second conductive trace on a top surface of the third layer; and
a conductive via extending through the first layer, the second layer, and the third layer and in contact with a top surface of the first conductive trace and a bottom surface of the second conductive trace.