	US 12,266,579 B2
	Method and system for adjusting the gap between a wafer and a top plate in a thin-film deposition process
Sheng-Chan Li, Hsinchu (TW); Sheng-Chau Chen, Hsinchu (TW); Cheng-Hsien Chou, Hsinchu (TW); and Cheng-Yuan Tsai, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,004.
Prior Publication US 2023/0069081 A1, Mar. 2, 2023
Int. Cl. H01L 21/02 (2006.01); C23C 16/46 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/66 (2006.01)

CPC H01L 22/20 (2013.01) [C23C 16/46 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/32724 (2013.01); H01J 37/32944 (2013.01); H01L 21/02274 (2013.01); H01J 2237/3321 (2013.01)]

20 Claims

1. A method comprising:

performing, with a thin-film deposition system, a thin-film deposition process on a wafer;

generating, with a gap sensor, sensor signals indicative of a gap between a top plate of the thin-film deposition system and the wafer during the thin-film deposition process, wherein the gap sensor is a thru-beam sensor, wherein generating sensor signals includes outputting a radiation beam through the gap with a radiation emitter of the thru-beam sensor and receiving the radiation beam with a radiation sensor of the thru-beam sensor, wherein the radiation beam has a diameter that is greater than the gap; and

adjusting the gap by moving the top plate responsive to the sensor signals during the thin-film deposition process.