US 12,266,577 B2
Deep trench isolation structure and method of making the same
Hung-Ling Shih, Tainan (TW); Tsung-Yu Yang, Tainan (TW); Yun-Chi Wu, Tainan (TW); and Po-Wei Liu, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Aug. 10, 2022, as Appl. No. 17/884,687.
Application 17/233,232 is a division of application No. 16/743,300, filed on Jan. 15, 2020, granted, now 11,031,303.
Application 17/884,687 is a continuation of application No. 17/233,232, filed on Apr. 16, 2021, granted, now 11,450,574.
Prior Publication US 2022/0384277 A1, Dec. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/8238 (2006.01); H01L 21/762 (2006.01); H01L 21/8249 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01)
CPC H01L 21/823878 (2013.01) [H01L 21/76224 (2013.01); H01L 21/823807 (2013.01); H01L 21/823864 (2013.01); H01L 21/8249 (2013.01); H01L 27/0623 (2013.01); H01L 29/0649 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of making a semiconductor structure comprising:
forming at least two moat trenches in a semiconductor device layer, wherein the at least two moat trenches surround a first semiconductor substrate material portion of the semiconductor device layer, and are laterally surrounded by a second semiconductor substrate material portion of the semiconductor device layer, and comprise a first moat trench and a second moat trench;
depositing a conformal diffusion barrier layer in the first moat trench and in the second moat trench;
forming insulating sidewall spacers on sidewalls of the first moat trench while filling the second moat trench with a portion of an insulating sidewall spacer material, wherein the insulating sidewall spacers are laterally spaced apart from each other by a gap that laterally surrounds one of the insulating sidewall spacers and is laterally surrounded by another of the insulating sidewall spacers; and
physically removing a portion of the conformal diffusion barrier layer inside the first moat trench from underneath the gap.