US 12,266,568 B2
Interconnect wires including relatively low resistivity cores
Hui Jae Yoo, Portland, OR (US); Tejaswi K. Indukuri, Boise, ID (US); Ramanan V. Chebiam, Hillsboro, OR (US); and James S. Clarke, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Dec. 11, 2023, as Appl. No. 18/535,623.
Application 15/096,609 is a division of application No. 14/038,502, filed on Sep. 26, 2013, granted, now 9,349,636, issued on May 24, 2016.
Application 18/535,623 is a continuation of application No. 18/088,474, filed on Dec. 23, 2022, granted, now 11,881,432.
Application 18/088,474 is a continuation of application No. 17/061,062, filed on Oct. 1, 2020, granted, now 11,569,126, issued on Jan. 31, 2023.
Application 17/061,062 is a continuation of application No. 15/631,701, filed on Jun. 23, 2017, granted, now 10,832,951, issued on Nov. 10, 2020.
Application 15/631,701 is a continuation of application No. 15/096,609, filed on Apr. 12, 2016, granted, now 9,691,657, issued on Jun. 27, 2017.
Prior Publication US 2024/0112952 A1, Apr. 4, 2024
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76849 (2013.01) [H01L 21/76838 (2013.01); H01L 21/76877 (2013.01); H01L 21/76882 (2013.01); H01L 23/53209 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 23/53242 (2013.01); H01L 23/53252 (2013.01); H01L 23/53257 (2013.01); H01L 23/53266 (2013.01); H01L 21/76843 (2013.01); H01L 2224/45015 (2013.01); H01L 2924/0002 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An integrated circuit structure, comprising:
a dielectric material;
a first trench in the dielectric material, the first trench having a bottom and sidewalls;
a second trench in the dielectric material, the second trench having a bottom and sidewalls, and the second trench laterally spaced apart from the first trench;
a first core material within the first trench, the first core material having a bottom surface, sidewall surfaces and a top surface;
a second core material within the second trench, the second core material having a bottom surface, sidewall surfaces and a top surface, the second core material having a vertical thickness different than a vertical thickness of the first core material;
a first jacket on the bottom surface, along the sidewall surfaces and on the top surface of the first core material in a cross-section perspective, wherein at least a portion of the first jacket on the top surface of the first core material is within the first trench in the dielectric material; and
a second jacket on the bottom surface, along the sidewall surfaces and on the top surface of the second core material in the cross-section perspective, wherein at least a portion of the second jacket on the top surface of the second core material is within the second trench in the dielectric material.