US 12,266,562 B2
Substrate processing method and substrate processing apparatus
Hajime Naito, Nirasaki (JP); Hidenori Miyoshi, Nirasaki (JP); and Shigeki Doba, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Oct. 7, 2021, as Appl. No. 17/450,209.
Claims priority of application No. 2020-170068 (JP), filed on Oct. 7, 2020.
Prior Publication US 2022/0108913 A1, Apr. 7, 2022
Int. Cl. H01J 37/32 (2006.01); H01L 21/677 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/68757 (2013.01) [H01J 37/32715 (2013.01); H01L 21/67739 (2013.01); H01L 21/68742 (2013.01); H01J 2237/20235 (2013.01); H01J 2237/332 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of processing a substrate using a substrate processing apparatus,
wherein the substrate processing apparatus includes:
a processing container configured to process the substrate therein;
a plasma generation space formed inside the processing container;
a processing space in communication with the plasma generation space via a partition plate;
a stage provided inside the processing space and configured to place the substrate on a top surface of the stage; and
a lifting mechanism configured to raise and lower the substrate on the stage,
the method comprising:
during a plasma processing on the substrate in the processing space, raising and lowering the substrate using the lifting mechanism to cause a potential change in the substrate during the plasma processing,
wherein the plasma processing is started in a state in which the substrate is separated from the stage by the lifting mechanism, and
wherein the substrate starts to be lowered by the lifting mechanism when the plasma processing is started.