US 12,266,550 B2
Multiple process semiconductor processing system
Nitin Pathak, Mumbai (IN); Vinay K. Prabhakar, Cupertino, CA (US); Badri N. Ramamurthi, Los Gatos, CA (US); Viren Kalsekar, Mountain View, CA (US); and Juan Carlos Rocha-Alvarez, San Carlos, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 19, 2020, as Appl. No. 16/932,795.
Prior Publication US 2022/0020615 A1, Jan. 20, 2022
Int. Cl. H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/677 (2006.01)
CPC H01L 21/67196 (2013.01) [H01J 37/32357 (2013.01); H01J 37/32715 (2013.01); H01J 37/32743 (2013.01); H01J 37/32834 (2013.01); H01J 37/32899 (2013.01); H01L 21/67017 (2013.01); H01L 21/67167 (2013.01); H01L 21/67751 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of semiconductor processing comprising:
delivering one or more processing precursors through a plurality of faceplates of a substrate processing system, each faceplate of the plurality of faceplates fluidly accessing a processing region of a plurality of processing regions, wherein each processing region of the plurality of processing regions is at least partially defined by a faceplate of the plurality of faceplates and comprise a substrate support of a plurality of substrate supports;
adjusting a flow rate of the one or more processing precursors to form a pressure differential between two processing regions of the plurality of processing regions;
delivering a purge gas into a plurality of transfer regions of the substrate processing system through a plurality of purge channels extending through a transfer region housing defining the plurality of transfer regions, wherein the plurality of transfer regions are fluidly coupled with a processing region of the plurality of processing regions and is disposed below each substrate support of the plurality of substrate supports when the plurality of substrate supports are positioned within the plurality of processing regions;
adjusting a flow rate of the purge gas into one or more transfer regions of the plurality of transfer regions through a choking liner extending from each substrate support of the plurality of substrate supports towards the plurality of transfer regions of the substrate processing system, corresponding to a pressure of one or more processing regions of the plurality of processing regions; and
exhausting the one or more processing precursors and the purge gas through a pumping liner seated below each faceplate of the plurality of faceplates.