US 12,266,540 B2
Method for fabricating layer structure having target topological profile
Eiichiro Shiba, Hachioji (JP); Yoshinori Ota, Tama (JP); René Henricus Jozef Vervuurt, Tama (JP); Nobuyoshi Kobayashi, Kawagoe (JP); and Akiko Kobayashi, Inagi (JP)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Dec. 6, 2023, as Appl. No. 18/530,759.
Application 18/530,759 is a continuation of application No. 17/192,865, filed on Mar. 4, 2021, granted, now 11,961,741.
Claims priority of provisional application 62/988,907, filed on Mar. 12, 2020.
Prior Publication US 2024/0128090 A1, Apr. 18, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/311 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/31116 (2013.01) [H01L 21/02164 (2013.01); H01L 21/0217 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for fabricating a layer structure having a target topology profile, the method comprising:
(a) providing a substrate with a lateral surface and a side surface;
(b) depositing a dielectric layer under adjusted deposition conditions onto the lateral surface and the side surface, wherein the dielectric layer comprises a lateral portion disposed on the lateral surface and a side portion disposed on the side surface, and wherein the lateral portion has a different etch resistance than the side portion, wherein the adjusted deposition conditions comprise adjusted conditions of at least one of plasma power, gas selection, gas flow rate, pressure, and temperature in a reaction space;
(c) exposing the lateral portion and the side portion to fluorine and/or chlorine radicals, thereby removing at least a part of the dielectric layer, wherein a greater portion of the side portion or the lateral portion is removed than the other of the side portion or lateral portion, thereby forming a layer structure having the target topology profile on the substrate, wherein the target topology profile is either a side face-remaining topology profile or alternatively a lateral face-remaining topology profile.