US 12,266,536 B2
Mid-processing removal of semiconductor fins during fabrication of integrated circuit structures
Mehmet O. Baykan, Beaverton, OR (US); Anurag Jain, Portland, OR (US); and Szuya S. Liao, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jun. 30, 2023, as Appl. No. 18/216,984.
Application 18/216,984 is a continuation of application No. 16/631,345, granted, now 11,887,860, previously published as PCT/US2017/052002, filed on Sep. 18, 2017.
Prior Publication US 2023/0343599 A1, Oct. 26, 2023
Int. Cl. H01L 21/308 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01)
CPC H01L 21/3088 (2013.01) [H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/1037 (2013.01); H01L 29/161 (2013.01); H01L 29/20 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An integrated circuit structure, comprising:
a first fin above a substrate;
a second fin above the substrate, the second fin laterally spaced apart from the first fin by a first width;
a first isolation material structure laterally between the first fin and the second fin, the first isolation material structure having a first thickness;
a third fin above the substrate, the third fin laterally spaced apart from the second fin by a second width, the second width greater than the first width;
a second isolation material structure laterally between the second fin and the third fin, the second isolation material structure having a second thickness, the second thickness greater than the first thickness;
a fourth fin above the substrate, the fourth fin laterally spaced apart from the third fin by a third width, the third width less than the second width; and
a third isolation material structure laterally between the third fin and the fourth fin, the third isolation material structure having a third thickness, the third thickness less than the second thickness, and the third thickness greater than the first thickness.