| CPC H01L 21/3086 (2013.01) [H01L 21/3081 (2013.01)] | 20 Claims |
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1. A method of forming a semiconductor device, the method comprising:
forming a patterned layer over an amorphous carbon layer (ACL) to be etched, the ACL disposed over a substrate; and
patterning the ACL using the patterned layer as an etch mask, by performing an initial cycle and one or more subsequent cycles of a cyclic process to gradually form a recess in the ACL, wherein the initial cycle and the one or more subsequent cycles each comprise:
depositing, using a first plasma, a protective layer containing silicon over the patterned layer and one or more exposed surfaces of the ACL, the first plasma comprising a silicon-based precursor and a carrier gas; and
etching, using a second plasma, an incremental portion of the recess in the ACL, the second plasma containing oxygen,
wherein:
the incremental portion of the initial cycle is an initial portion of the recess being gradually formed in the ACL such that the protective layer is deposited in the initial cycle prior to etching the initial portion of the recess in the ACL, the incremental portion of each of the one or more subsequent cycles further extending the recess being gradually formed in the ACL,
during the initial cycle and the one or more subsequent cycles, the protective layer is deposited over a top surface of the patterned layer and along a top surface of the ACL exposed by the patterned layer, and
during the one or more subsequent cycles, the protective layer is further deposited along sidewall surfaces of the ACL in the recess being gradually formed in the ACL and exposed by the patterned layer.
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9. A method of forming a semiconductor device, the method comprising:
positioning a semiconductor wafer in a plasma process chamber, the semiconductor wafer comprising a patterned layer positioned over an underlying layer to be etched, the underlying layer comprising an amorphous carbon layer formed over a dielectric layer disposed on a substrate; and
performing an initial cycle and one or more subsequent cycles of a cyclic plasma etch process in the plasma process chamber to gradually form recesses in the underlying layer until the dielectric layer is exposed, the initial cycle and the one or more subsequent cycles of the cyclic plasma etch process each comprising:
introducing, in a protective layer deposition step, a first processing gas into the plasma process chamber such that a protective layer is deposited over the patterned layer and along exposed surfaces of the underlying layer, the first processing gas comprising a silicon-based precursor and a carrier gas, the protective layer containing silicon; and
subsequent to the protective layer deposition step, introducing, in an etch step, a second processing gas into the plasma process chamber such that the recesses are gradually etched in the underlying layer according to the patterned layer, the second processing gas being oxygen based,
wherein the etch step of the initial cycle is an initial etch of the underlying layer and forms initial portions of the recesses in the underlying layer and each subsequent cycle of the one or more subsequent cycles extends the recesses in the underlying layer, and
wherein the method comprises, during each of the initial cycle and the one or more subsequent cycles of the cyclic plasma etch process, executing a purge of the plasma process chamber between the protective layer deposition step and the etch step.
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15. A method of forming a semiconductor device, the method comprising:
receiving a substrate having an etch mask layer positioned over an underlying hard mask layer to be etched, the etch mask layer having a pattern for patterning the underlying hard mask layer; and
patterning, through an initial cycle and one or more subsequent cycles of a cyclic etching process, the underlying hard mask layer using the etch mask layer to gradually form a recess in the underlying hard mask layer according to the pattern, the initial cycle and the one or more subsequent cycles each comprising:
depositing, in a deposition step and using a first plasma, a silicon-containing protective layer over the etch mask layer and the underlying hard mask layer such that the silicon-containing protective layer covers exposed surfaces of the underlying hard mask layer; and
subsequent to the deposition step, etching, in an etch step and using a second plasma, the underlying hard mask layer to form an incremental portion of the recess in the underlying hard mask layer, the second plasma comprising oxygen,
wherein the incremental portion of the initial cycle of the cyclic etching process is an initial portion of the recess in the underlying hard mask layer such that the deposition step of the initial cycle is performed prior to forming the initial portion of the recess in the underlying hard mask layer.
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