US 12,266,533 B2
Sacrificial capping layer for contact etch
Yun Han, Albany, NY (US); Andrew Metz, Albany, NY (US); and Peter Biolsi, New Windsor, NY (US)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Apr. 15, 2022, as Appl. No. 17/721,620.
Claims priority of provisional application 63/195,436, filed on Jun. 1, 2021.
Prior Publication US 2022/0384199 A1, Dec. 1, 2022
Int. Cl. H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/3065 (2013.01) [H01L 21/02164 (2013.01); H01L 21/31138 (2013.01); H01L 21/76829 (2013.01); H01L 29/66795 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
providing a substrate comprising an epitaxial source/drain region and an etch stop layer on the epitaxial source/drain region;
performing a plasma etching process using an etching gas that removes the etch stop layer and forms a sacrificial oxide capping layer on the epitaxial source/drain region; and
removing the sacrificial oxide capping layer from the epitaxial source/drain region using an etch process that does not damage the epitaxial source/drain region under the sacrificial oxide capping layer.