US 12,266,532 B2
Semiconductor device and fabrication method
Yasunori Agata, Matsumoto (JP); Takahiro Tamura, Matsumoto (JP); and Toru Ajiki, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Nov. 19, 2023, as Appl. No. 18/513,624.
Application 18/513,624 is a continuation of application No. 17/847,170, filed on Jun. 23, 2022, granted, now 11,854,782.
Application 17/847,170 is a continuation of application No. 17/079,545, filed on Oct. 26, 2020, granted, now 11,373,869, issued on Jun. 28, 2022.
Application 17/079,545 is a continuation of application No. PCT/JP2019/044759, filed on Nov. 14, 2019.
Claims priority of application No. 2018-215548 (JP), filed on Nov. 16, 2018.
Prior Publication US 2024/0096629 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/00 (2006.01); H01L 21/22 (2006.01); H01L 21/265 (2006.01); H01L 27/06 (2006.01); H01L 29/32 (2006.01); H01L 29/36 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01)
CPC H01L 21/221 (2013.01) [H01L 21/26526 (2013.01); H01L 27/0664 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface, wherein
the semiconductor substrate has a hydrogen containing region that contains hydrogen,
the hydrogen containing region contains a lifetime control region,
a carrier concentration distribution of the hydrogen containing region in a depth direction has:
a first local maximum point having a local maximum value in a carrier concentration;
a second local maximum point positioned closest to the first local maximum point among one or more upper-side local maximum points positioned between the first local maximum point and the upper surface and each having a local maximum value in the carrier concentration;
a first intermediate point positioned between the first local maximum point and the second local maximum point and having a local minimum value in the carrier concentration; and
a second intermediate point positioned closest to the second local maximum point among (i) one or more upper-side local minimum points positioned between the second local maximum point and the upper surface and each having a local minimum value in the carrier concentration or (ii) a plurality of upper-side flat points at which the carrier concentration remains constant in the depth direction, the plurality of upper-side flat points positioned between the second local maximum point and the upper surface,
the lifetime control region is positioned at least between the first local maximum point and the second local maximum point, and
the carrier concentration at the first intermediate point is lower than the carrier concentration at the second intermediate point.