US 12,266,530 B2
Manufacturing method of an element of an electronic device having improved reliability, and related element, electronic device and electronic apparatus
Simone Rascuna', Catania (IT); and Mario Giuseppe Saggio, Aci Bonaccorsi (IT)
Assigned to STMICROELECTRONICS S.r.l., Agrate Brianza (IT)
Filed by STMICROELECTRONICS S.r.l., Agrate Brianza (IT)
Filed on Dec. 22, 2023, as Appl. No. 18/395,174.
Application 18/395,174 is a division of application No. 17/458,102, filed on Aug. 26, 2021, granted, now 11,869,771.
Claims priority of application No. 102020000021058 (IT), filed on Sep. 4, 2020.
Prior Publication US 2024/0203737 A1, Jun. 20, 2024
Int. Cl. H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01)
CPC H01L 21/045 (2013.01) [H01L 29/1608 (2013.01); H01L 29/66053 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming, in a semiconductor body at a first distance from a first surface of the semiconductor body in a first direction transverse to the first surface, a first implanted region having a first dimension in a second direction transverse to the first direction;
forming, in the semiconductor body, a second implanted region being superimposed to the first implanted region, extending from the first surface to the first implanted region, and having a second dimension in the second direction and smaller than the first dimension;
forming, in the semiconductor body and at a second distance from the first surface, at least one third implanted region so that the first and the second implanted regions are interposed between the at least one third implanted region and the first surface in the first direction, the first implanted region is in contact with the at least one third implanted region, and the at least one third implanted region having a third dimension in the second direction greater than the first dimension and the second dimension;
forming an oxidized region at the first implanted region, the second implanted region, and the third implanted region by performing a thermal oxidation of the first implanted region, the second implanted region, and the third implanted region;
forming a cavity by removing said oxidized region in the semiconductor body; and
forming, on the first surface, a passivation layer in the cavity an anchorage element of the passivation layer fixing the passivation layer to the semiconductor body.