	US 12,266,529 B2
	Patterning semiconductor devices and structures resulting therefrom
Chun-Yu Kao, Hsinchu (TW); Sung-En Lin, Xionglin Township (TW); and Chia-Cheng Chao, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 3, 2023, as Appl. No. 18/501,283.
Application 18/501,283 is a continuation of application No. 17/314,445, filed on May 7, 2021, granted, now 11,848,209.
Claims priority of provisional application 63/154,001, filed on Feb. 26, 2021.
Prior Publication US 2024/0063020 A1, Feb. 22, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/033 (2006.01); H01L 21/308 (2006.01)

CPC H01L 21/0338 (2013.01) [H01L 21/3088 (2013.01)]

20 Claims

1. A method comprising:

depositing a first mask over a target layer;

forming a plurality of mandrels over the first mask, wherein the plurality of mandrels comprises a first mandrel and a second mandrel;

forming a plurality of spacers on sidewalls of the plurality of mandrels, wherein the plurality of spacers comprises first spacers on the sidewalls of the first mandrel;

depositing a second mask over the plurality of mandrels and the plurality of spacers;

forming a capping layer over the second mask, wherein the capping layer comprises carbon;

patterning the second mask through the capping layer to expose the first mandrel and the first spacers; and

selectively removing the first spacers without removing the first mandrel while remaining portions of the second mask cover the second mandrel.

10. A method comprising:

forming a first mandrel and a second mandrel over a mask layer;

forming first spacers on sidewalls of the first mandrel and second spacers on sidewalls of the second mandrel;

depositing an oxide layer over the first mandrel, the second mandrel, the first spacers, and the second spacers;

depositing a carbon-comprising layer over the oxide layer;

patterning the carbon-comprising layer to expose the oxide layer;

patterning the oxide layer to expose the second mandrel and the second spacers while masking the first spacers and the first mandrel with the carbon-comprising layer;

removing remaining portions of the carbon-comprising layer;

removing the second spacers;

after removing the second spacers, removing remaining portions of the oxide layer; and

transferring a pattern of the first spacers, the first mandrel, and the second mandrel to the mask layer.

16. A method comprising:

depositing a first mask over a target layer;

forming a first mandrel and a second mandrel over the first mask;

forming first spacers on the first mandrel and second spacers on the second mandrel;

selectively removing the second spacers while masking the first spacers, wherein masking the first spacers comprises covering the first spacers with a carbon-comprising capping layer having a carbon concentration of at least 30%;

removing remaining portions of the carbon-comprising capping layer;

patterning the first mask, wherein patterning the first mask comprises masking the first mask with the second mandrel, the first mandrel, and the first spacers; and

transferring a pattern of the first mask to the target layer.