| CPC H01L 21/0337 (2013.01) [H01L 21/0332 (2013.01); H01L 21/0338 (2013.01); H01L 21/308 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/32139 (2013.01); Y10S 438/947 (2013.01); Y10S 438/95 (2013.01)] | 20 Claims |
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1. A method for forming a patterned mask layer, comprising:
forming a layer over a substrate;
forming a first strip structure and a second strip structure over the layer;
forming a spacer layer over the first strip structure, the second strip structure, and the layer, wherein the spacer layer has a first strip part, a second strip part, and a connecting part, the first strip part and the second strip part are over a first sidewall of the first strip structure and a second sidewall of the second strip structure respectively, the connecting part is connected between the first strip part and the second strip part, the spacer layer has a first trench and a second trench, the connecting part separates the first trench from the second trench, and the first trench and the second trench expose portions of the layer;
forming a third strip structure and a fourth strip structure between the first strip part and the second strip part, wherein the third strip structure and the fourth strip structure are in the first trench and the second trench respectively, and the connecting part is between the third strip structure and the fourth strip structure; and
removing the spacer layer, wherein the first strip structure, the second strip structure, the third strip structure, and the fourth strip structure together form a patterned mask layer.
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