US 12,266,524 B2
Method for depositing boron containing silicon germanium layers
Lucas Petersen Barbosa Lima, Heverlee (BE); Rami Khazaka, Leuven (BE); and Qi Xie, Wilsele (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jun. 11, 2021, as Appl. No. 17/345,458.
Claims priority of provisional application 63/070,519, filed on Aug. 26, 2020.
Claims priority of provisional application 63/039,877, filed on Jun. 16, 2020.
Prior Publication US 2021/0391172 A1, Dec. 16, 2021
Int. Cl. H01L 21/02 (2006.01); C30B 25/04 (2006.01); C30B 25/16 (2006.01); C30B 25/18 (2006.01); C30B 29/52 (2006.01); C30B 33/12 (2006.01); H01L 29/167 (2006.01)
CPC H01L 21/02579 (2013.01) [C30B 25/04 (2013.01); C30B 25/165 (2013.01); C30B 25/18 (2013.01); C30B 29/52 (2013.01); C30B 33/12 (2013.01); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 29/167 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for epitaxially growing a boron doped silicon germanium layer comprising:
providing a substrate comprising a monocrystalline surface in a reactor chamber;
performing a deposition cycle, wherein a unit of the deposition cycle consists essentially of:
introducing a gas consisting essentially of a silicon precursor, a germanium precursor, a boron precursor, and a carrier gas into the reactor chamber, thereby epitaxially growing a boron doped silicon germanium layer on the monocrystalline surface,
a purge step after the step of introducing a gas consisting essentially of a silicon precursor, a germanium precursor, a boron precursor, and a carrier gas into the reactor chamber; and
repeating the deposition cycle a plurality of times until a desired thickness of a boron doped silicon germanium layer is achieved,
wherein the silicon precursor comprises disilane,
wherein the germanium precursor comprises germane,
wherein the boron precursor comprises diborane, and
wherein the substrate is maintained at a temperature in the range of 200° C. to 450° C., as measured by means of a pyrometer.