CPC H01L 21/0228 (2013.01) [C23C 16/345 (2013.01); C23C 16/4412 (2013.01); C23C 16/4583 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01J 37/32541 (2013.01); H01J 2237/3321 (2013.01)] | 17 Claims |
1. A substrate processing apparatus comprising:
a process chamber in which a substrate is capable of being accommodated; and
a gas supply system configured to supply a first process gas into the process chamber,
wherein the gas supply system comprises:
a first gas supply port configured to supply the first process gas to the substrate from an outer periphery of the substrate along a first supply direction;
a second gas supply port configured to supply the first process gas to the substrate from the outer periphery of the substrate along a second supply direction more inclined toward a tangential direction of the substrate from the second gas supply port than a direction parallel to the first supply direction; and
a storage part configured to temporarily store the first process gas to be supplied to at least one of the first gas supply port or the second gas supply port.
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