CPC H01J 37/3405 (2013.01) [C23C 14/35 (2013.01); C23C 14/56 (2013.01); H01J 37/18 (2013.01); H01J 37/3414 (2013.01); H01J 2237/002 (2013.01)] | 14 Claims |
1. A magnetron sputtering device comprising:
a chamber having a vacuum state therein;
a gas supply pipe configured to supply argon (Ar) gas into the chamber;
a sputtering head provided within the chamber, and comprising a sputtering target and a magnetic body disposed on a bottom end of the sputtering target to generate a magnetic field;
a power supply configured to supply current to the sputtering target to generate plasma;
a cooling device comprising a refrigerant pipe, through which refrigerant circulating from outside the chamber to the sputtering head, flows, and configured to cool the sputtering head to a low temperature; and
a sputtering shield surrounding an area of the refrigerant pipe located outside the chamber, and comprising a gas inlet communicating with the gas supply pipe, a refrigerant inlet and a refrigerant outlet communicating with the refrigerant pipe,
wherein the sputtering shield includes a communication hole communicating with the chamber to have a vacuum state therein, and
the refrigerant pipe delivers the refrigerant while being disposed in a dual vacuum structure, wherein in the dual vacuum structure,
an area of the refrigerant pipe located outside the chamber is disposed within the sputtering shield having the vacuum state, and
an area of the refrigerant pipe located between the sputtering shield and the sputtering head is disposed within the chamber having the vacuum state,
wherein the gas supply pipe extends through the sputtering shield to connect the gas inlet to the sputtering head.
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