US 12,266,514 B2
Substrate processing apparatus and substrate temperature correction method
Rei Ibuka, Miyagi (JP); Dai Igarashi, Miyagi (JP); and Yuki Kato, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 25, 2022, as Appl. No. 17/652,520.
Claims priority of application No. 2021-029629 (JP), filed on Feb. 26, 2021; and application No. 2022-003438 (JP), filed on Jan. 13, 2022.
Prior Publication US 2022/0277939 A1, Sep. 1, 2022
Int. Cl. H01J 37/32 (2006.01); G05B 19/401 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32724 (2013.01) [G05B 19/401 (2013.01); H01L 21/67248 (2013.01); G05B 2219/45031 (2013.01); G05B 2219/50333 (2013.01); H01J 2237/334 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A substrate processing apparatus, comprising:
a placing table provided with a placing surface on which a substrate is placed, a flow path formed inside to allow a temperature control medium to flow therein, and a discharge opening through which a heat transfer gas is discharged to the placing surface;
a gas supply configured to supply the heat transfer gas to be discharged through the discharge opening;
a measurement unit configured to measure a temperature of the temperature control medium flown into the flow path; and
a controller configured to control, when the temperature of the temperature control medium measured by the measurement unit is changed by equal to or more than a predetermined temperature at a change timing, a pressure of the heat transfer gas supplied from the gas supply to eliminate a temperature change of the substrate caused by a temperature change of the temperature control medium after a predetermined time taken before the temperature change of the substrate placed on the placing surface takes place due to the temperature change of the temperature control medium passes by from the change timing,
wherein the controller is further configured to calculate a correction amount of the pressure of the heat transfer gas for correcting the temperature change of the substrate by using a relational expression indicating a relationship between the pressure of the heat transfer gas supplied from the gas supply and a temperature of the substrate, and to change the pressure of the heat transfer gas supplied from the gas supply by as much as the correction amount after the predetermined time elapses from the change timing.