| CPC H01J 37/32669 (2013.01) [H01J 37/3244 (2013.01); H01J 37/32458 (2013.01); H01J 37/3455 (2013.01); H01J 2237/334 (2013.01)] | 20 Claims |

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1. A plasma processing apparatus, the apparatus comprising
a housing defining a space accommodating a wafer therein;
a gas supply member configured to supply gas into the housing;
a plasma source generating a plasma from the gas supplied into the housing; and
a magnetic field generating member disposed on the housing and configured to generate a magnetic field inside the housing, wherein the magnetic field generating member comprises:
a first magnet unit disposed on the housing and including a first pole and a second pole; and
a second magnet unit spaced from the first magnet unit and including a first pole and a second pole, wherein
the second magnet unit is rotatable relative to the first magnet unit between a first position where the first pole of the second magnet opposes the first pole of the first magnet, and a second position wherein the second pole of the second magnet opposes the first pole of the first magnet.
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