US 12,266,503 B2
Hybrid plasma source array
Maolin Long, Santa Clara, CA (US)
Assigned to Beijing E-Town Semiconductor Technology Co., LTD, Beijing (CN); and Mattson Technology, Inc., Fremont, CA (US)
Filed by Beijing E-Town Semiconductor Technology Co., LTD, Bejing (CN); and Mattson Technology, Inc., Fremont, CA (US)
Filed on May 25, 2022, as Appl. No. 17/824,504.
Claims priority of provisional application 63/242,534, filed on Sep. 10, 2021.
Claims priority of provisional application 63/192,712, filed on May 25, 2021.
Prior Publication US 2022/0384144 A1, Dec. 1, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/3211 (2013.01) [H01J 37/32091 (2013.01); H01J 37/32541 (2013.01); H01J 37/32651 (2013.01); H01J 2237/3343 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A plasma source array, comprising:
a plurality of hybrid plasma sourcelets disposed on a base plate, each hybrid plasma sourcelet comprising:
a dielectric tube having an inner area and an outer surface;
an inductively coupled plasma source for generating a inductively coupled plasma disposed proximate to the outer surface of the dielectric tube;
a capacitively coupled plasma source for generating a capacitively coupled plasma disposed within the inner area of the dielectric tube; and
a gas injection system configured to supply one or more process gases to the inner area of the dielectric tube, wherein the base plate comprises a plurality of apertures disposed beneath each of the hybrid plasma sourcelets, wherein the capacitively coupled plasma source is disposed above the inductively coupled plasma source in a Z-direction.