CPC H01J 37/05 (2013.01) [G21K 1/10 (2013.01)] | 17 Claims |
1. An implantation device for implantation of ions into a substrate, comprising an energy filter arranged in an ion beam path of the implantation device,
the energy filter configured for establishing a dopant depth profile of the implanted ions in the substrate, and
the energy filter having a plurality of layers or layer sections which are arranged one after another in an ion beam direction of the ion beam path, each of the plurality of layers or layer sections configured as a membrane, wherein two end layers of the plurality of layers or layer sections outwardly bound the energy filter on opposite sides of the energy filter in the ion beam direction and are continuous and planar in design,
wherein the energy filter has a plurality of interior walls, each extending between and joining at least two of the plurality of layers or layer sections to one another, the plurality of interior walls and the plurality of layers or layer sections forming a plurality of cavities and each cavity of the plurality of cavities being formed in a spacing between two of the plurality of layers or layer sections and being surrounded by at least two of the plurality of layers or layer sections and at least two of the plurality of interior walls, and
wherein the each cavity of the plurality of cavities is closed in the ion beam direction by the at least two of the plurality of layers or layer sections.
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