US 12,266,463 B2
Transformer device
Hsiao-Tsung Yen, Hsinchu (TW); and Ting-Yao Huang, Hsinchu (TW)
Assigned to REALTEK SEMICONDUCTOR CORPORATION, Hsinchu (TW)
Filed by Realtek Semiconductor Corporation, Hsinchu (TW)
Filed on Jul. 19, 2021, as Appl. No. 17/378,917.
Claims priority of application No. 109146795 (TW), filed on Dec. 30, 2020.
Prior Publication US 2022/0208435 A1, Jun. 30, 2022
Int. Cl. H01F 27/28 (2006.01); H01F 27/29 (2006.01)
CPC H01F 27/2804 (2013.01) [H01F 27/29 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A transformer device, comprising:
a first trace, comprising:
a first sub-trace, located on a first layer; and
a second sub-trace, located on a second layer, and coupled to the first sub-trace at a first area and a second area respectively, wherein the first area and the second area are connected to each other at a junction;
a first connection member, coupled to the first sub-trace and the second sub-trace;
a second trace, comprising:
a third sub-trace, located on the first layer, and disposed in turn with the first sub-trace at the first area and the second area respectively; and
a fourth sub-trace, located on the second layer, coupled to the third sub-trace at the first area and the second area respectively, and disposed in turn with the second sub-trace at the first area and the second area respectively;
a second connection member, coupled to the third sub-trace and the fourth sub-trace; and
a first input/output member, disposed at the first area, wherein the first sub-trace comprises a plurality of first wires, and the first input/output member is coupled to the first wire which is located at an inner side among the first wires, wherein the first input/output member is located on a third layer.