US 12,266,419 B2
Semiconductor device
Dojeon Lee, Hwaseong-si (KR); Junehong Park, Seongnam-si (KR); and Kichang Jang, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 14, 2022, as Appl. No. 17/944,414.
Claims priority of application No. 10-2021-0185671 (KR), filed on Dec. 23, 2021; and application No. 10-2022-0035211 (KR), filed on Mar. 22, 2022.
Prior Publication US 2023/0206962 A1, Jun. 29, 2023
Int. Cl. G11C 7/04 (2006.01); G11C 5/06 (2006.01); G11C 5/14 (2006.01); G11C 7/10 (2006.01)
CPC G11C 7/04 (2013.01) [G11C 5/063 (2013.01); G11C 5/147 (2013.01); G11C 7/1039 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first voltage generating circuit configured to output a first voltage based on a temperature;
an analog-to-digital converter configured to convert the first voltage into a temperature code;
a code conversion logic configured to output an offset code and a level code of a temperature section to which the temperature belongs among a plurality of temperature sections based on the temperature code;
an offset voltage generating circuit configured to output an offset voltage based on the offset code;
a second voltage generating circuit configured to output a second voltage having a constant value within a temperature section to which the temperature belongs among the plurality of temperature sections based on the level code; and
a temperature compensation voltage generating circuit configured to
receive the first voltage, the second voltage, the offset voltage, and a feedback voltage, the feedback voltage being based on the first voltage, the second voltage, and the offset voltage, and
output a temperature compensation voltage.