US 12,266,400 B2
Apparatus and method for ZQ calibration of data transmission driving circuit in memory chip package of multi-memory die structure
Min-Hyung Cho, Daejeon (KR); Young-Deuk Jeon, Sejong-si (KR); and Jin Ho Han, Seoul (KR)
Assigned to ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon (KR)
Filed by ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon (KR)
Filed on Nov. 8, 2022, as Appl. No. 17/983,016.
Claims priority of application No. 10-2021-0152952 (KR), filed on Nov. 9, 2021; and application No. 10-2022-0094950 (KR), filed on Jul. 29, 2022.
Prior Publication US 2023/0147293 A1, May 11, 2023
Int. Cl. G11C 11/4099 (2006.01); G11C 5/04 (2006.01); G11C 5/06 (2006.01)
CPC G11C 11/4099 (2013.01) [G11C 5/04 (2013.01); G11C 5/063 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for ZQ calibration for a data transmission driving circuit of each memory die in a memory chip package in which a plurality of memory dies are stacked, the method comprising:
generating a reference current or a reference voltage through a reference resistor connected between a power terminal supplying a power voltage of the data transmission driving circuit and a ground terminal and a first transistor that is diode-connected, wherein the reference current or the reference voltage is generated on a first memory die of the plurality of memory dies and shared with the other memory dies of the plurality of memory dies;
supplying a plurality of first currents corresponding to the reference current or the reference voltage to pull-up drivers of the plurality of memory dies, respectively;
performing ZQ calibration of pull-up drivers of the plurality of memory dies, respectively, wherein ZQ calibration of a pull-up driver of the first memory die is performed simultaneously with ZQ calibration of pull-up drivers of the other memory dies; and
performing ZQ calibration of pull-down drivers of the plurality of memory dies respectively, wherein ZQ calibration of a pull-down driver is performed based on an output impedance of a corresponding ZQ calibrated pull-up driver in the same memory die.