CPC G11C 11/40615 (2013.01) [G11C 11/4078 (2013.01); G11C 11/4096 (2013.01); G11C 29/46 (2013.01)] | 20 Claims |
1. A memory device, comprising:
a memory cell array including a plurality of rows; and
a refresh manager configured to:
initialize a count for a row among the plurality of rows of the memory cell array;
transmit a refresh command to the memory cell array;
write first data into the row when the refresh operation for the memory cell array is a normal refresh operation; and
write second data into at least one word line adjacent to a word line of a row on which row hammering has occurred, when the refresh operation is not the normal refresh operation.
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