US 12,266,394 B2
Robust functionality for memory management associated with high-temperature storage and other conditions
Angelo Visconti, Appiano Gentile (IT); and Jonathan J. Strand, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 2, 2022, as Appl. No. 17/831,368.
Claims priority of provisional application 63/347,870, filed on Jun. 1, 2022.
Prior Publication US 2023/0395115 A1, Dec. 7, 2023
Int. Cl. G11C 11/22 (2006.01)
CPC G11C 11/2297 (2013.01) [G11C 11/221 (2013.01); G11C 11/2275 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A method, comprising:
determining to perform an imprint conditioning procedure on one or more memory cells of a memory array of a memory device based at least in part on an indication of a power down of the memory device;
writing a respective logic value to at least one of the one or more memory cells in accordance with an imprint conditioning pattern based at least in part on determining to perform the imprint conditioning procedure; and
performing the power down of the memory device based at least in part on the indication of the power down and writing the respective logic value to the at least one of the one or more memory cells.