US 12,265,773 B2
Method and apparatus for electromigration evaluation
Hsien Yu Tseng, Miaoli County (TW); and Wei-Ming Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Apr. 19, 2023, as Appl. No. 18/302,809.
Application 18/302,809 is a continuation of application No. 17/235,790, filed on Apr. 20, 2021, granted, now 11,675,950.
Claims priority of provisional application 63/133,755, filed on Jan. 4, 2021.
Prior Publication US 2023/0252216 A1, Aug. 10, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 30/398 (2020.01); G06F 30/323 (2020.01); G06F 30/392 (2020.01); G06F 119/08 (2020.01)
CPC G06F 30/392 (2020.01) [G06F 30/323 (2020.01); G06F 30/398 (2020.01); G06F 2119/08 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing an active area in an integrated circuit design layout;
grouping the active area into a first region and a second region;
calculating a first self-heating temperature of the first region of the active area;
calculating a second self-heating temperature of the second region of the active area;
determining an Electromigration (EM) evaluation based on the first self-heating temperature and the second self-heating temperature; and
generating a semiconductor device based on the integrated circuit design layout passing the EM evaluation,
wherein a height of the first region of the active area is different from a height of the second region of the active area.