US 12,265,336 B2
Semiconductor processing tool and methods of operation
Kai-Chieh Chang, Changhua (TW); Che-Chang Hsu, Taichung (TW); Yen-Shuo Su, Hsinchu (TW); Chun-Lin Chang, Zhubei (TW); Kai-Fa Ho, New Taipei (TW); Li-Jui Chen, Hsinchu (TW); and Heng-Hsin Liu, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 27, 2021, as Appl. No. 17/446,241.
Claims priority of provisional application 63/201,462, filed on Apr. 30, 2021.
Prior Publication US 2022/0350264 A1, Nov. 3, 2022
Int. Cl. G03F 7/00 (2006.01); G02B 5/08 (2006.01)
CPC G03F 7/70916 (2013.01) [G02B 5/0891 (2013.01); G03F 7/70033 (2013.01); G03F 7/70933 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a flow of a gas into an extreme ultraviolet (EUV) exposure tool to clean one or more mirrors included in the EUV exposure tool,
wherein the gas reacts with contaminants on the one or more mirrors to form a plurality of byproduct gasses; and
removing the plurality of byproduct gasses from the EUV exposure tool,
wherein a combination of providing the flow of the gas and removing the plurality of the byproduct gasses is performed for a time duration in a range of approximately 2 hours to approximately 5 hours.