| CPC G03F 7/70441 (2013.01) [G03F 1/36 (2013.01); G03F 7/705 (2013.01)] | 20 Claims |
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1. A method comprising:
receiving a layout for fabricating a mask;
determining a plurality of target contours corresponding to a plurality of sets of lithographic process conditions, wherein at least two of the plurality of target contours are different;
determining a modification to the layout;
simulating the modification to the layout under the plurality of sets of lithographic process conditions to produce a plurality of simulated contours;
determining a cost of the modification to the layout based on comparisons between the plurality of simulated contours and corresponding ones in the plurality of target contours; and
providing the modification to the layout for fabricating the mask based at least in part on the cost being within a predetermined threshold.
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