	US 12,265,332 B2
	Method of manufacturing a semiconductor device
Yu-Tse Lai, Zhubei (TW); Minfeng Chen, Hsinchu (TW); and Ya Hui Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Oct. 1, 2021, as Appl. No. 17/491,743.
Claims priority of provisional application 63/212,511, filed on Jun. 18, 2021.
Prior Publication US 2023/0004087 A1, Jan. 5, 2023
Int. Cl. G03F 7/09 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01)

CPC G03F 7/094 (2013.01) [G03F 7/2004 (2013.01); H01L 21/0274 (2013.01); H01L 21/31144 (2013.01)]

20 Claims

1. A method of manufacturing a semiconductor device, comprising:

forming a first resist layer over a substrate;

forming a second resist layer over the first resist layer, wherein the second resist layer is a metal-containing resist;

patterning the second resist layer to expose a portion of the first resist layer to form a second resist layer pattern, wherein the patterning includes exposing the second resist layer to a scanning electron beam;

exposing the first resist layer to extreme ultraviolet (XUV) radiation diffracted by the second resist layer pattern; and

removing portions of the first resist layer exposed to the XUV radiation diffracted by the second resist layer.