US 12,265,331 B2
Radiation-sensitive resin composition and method for forming resist pattern
Ryuichi Nemoto, Tokyo (JP); Kota Furuichi, Tokyo (JP); and Hajime Inami, Tokyo (JP)
Assigned to JSR CORPORATION, Tokyo (JP)
Filed by JSR CORPORATION, Tokyo (JP)
Filed on Jun. 30, 2022, as Appl. No. 17/854,012.
Application 17/854,012 is a continuation in part of application No. PCT/JP2020/047968, filed on Dec. 22, 2020.
Claims priority of application No. 2020-000576 (JP), filed on Jan. 6, 2020.
Prior Publication US 2022/0342307 A1, Oct. 27, 2022
Int. Cl. G03F 7/039 (2006.01); G03F 7/004 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01)
CPC G03F 7/0397 (2013.01) [G03F 7/0048 (2013.01); G03F 7/0392 (2013.01); G03F 7/0395 (2013.01); G03F 7/11 (2013.01); G03F 7/2006 (2013.01); G03F 7/30 (2013.01)] 20 Claims
 
1. A radiation-sensitive resin composition comprising:
a resin comprising a structural unit (A) represented by formula (1) and a structural unit (B) having an acid-dissociable group;
a radiation-sensitive acid generator; and
a solvent,

OG Complex Work Unit Chemistry
wherein
R1 is a halogen atom-substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, the monovalent hydrocarbon group not including a sulfur atom,
X is —O— or —S—,
La1 is a halogen atom-substituted or unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms, and
RP is a monovalent organic group having at least one structure selected from the group consisting of a cyclic carbonate structure and a sultone structure.
 
11. A method for forming a resist pattern, comprising:
forming a resist film from the radiation-sensitive resin composition according to claim 1;
exposing the resist film; and
developing the exposed resist film.