US 12,265,330 B2
Polymer material in a redistribution structure of a semiconductor package and method of manufacture
Sih-Hao Liao, New Taipei (TW); Yu-Hsiang Hu, Hsinchu (TW); Hung-Jui Kuo, Hsinchu (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 9, 2023, as Appl. No. 18/446,562.
Application 18/446,562 is a division of application No. 17/026,667, filed on Sep. 21, 2020, granted, now 11,868,047.
Prior Publication US 2023/0384672 A1, Nov. 30, 2023
Int. Cl. G03F 7/031 (2006.01); C08G 73/10 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/18 (2023.01); H01L 21/56 (2006.01)
CPC G03F 7/031 (2013.01) [C08G 73/1067 (2013.01); C08G 73/1071 (2013.01); G03F 7/0387 (2013.01); G03F 7/039 (2013.01); H01L 21/481 (2013.01); H01L 21/4857 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01L 23/49894 (2013.01); H01L 23/5389 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 25/18 (2013.01); H01L 21/561 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/82101 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a first encapsulant on a first dielectric layer, the first encapsulant encapsulating a first through via; and
a first redistribution structure over the first encapsulant and the first through via, the first redistribution structure comprising:
a second dielectric layer, the second dielectric layer having a dissipation factor in a range of 0.007 to 0.01 at 60 GHz and having a Young's modulus in a range of 3.7 GPa to 3.8 GPa; and
a first metallization pattern on the second dielectric layer, the first metallization pattern physically and electrically coupling the first through via.