providing the substrate with a first relief pattern comprised of a photoresist material, the first relief pattern including structures having top portions and sidewall portions, the first relief pattern positioned on an underlying layer;

executing a deposition process that deposits an organic polymer on the first relief pattern, the deposition process including a plasma-based deposition process that includes a process chemistry including CxHy and a curing agent generating vacuum ultraviolet (VUV) light during plasma-based deposition;

executing a trim process; and

controlling the deposition and trim processes such that more organic polymer is deposited on top portions of the structures of the first relief pattern as compared to organic polymer deposited on sidewall portions of the structures of the first relief pattern,

wherein the controlling the deposition and trim corrects height variation of the first relief pattern, removes scumming, minimizes single line opens, and provides for a wider process window for utilizing the first relief pattern as a masking pattern,

wherein the curing agent is selected from argon, helium, hydrogen bromide, hydrogen, CxFy, xenon, or combinations thereof,

wherein the process chemistry including CxHy includes CH₄, and

wherein executing the trim process includes a gas chemistry of CO₂ and CH₄.