US 12,265,323 B2
Pellicle for an EUV lithography mask and a method of manufacturing thereof
Tzu-Ang Chao, Hsinchu (TW); Chao-Ching Cheng, Hsinchu (TW); and Han Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 21, 2023, as Appl. No. 18/516,630.
Application 18/516,630 is a continuation of application No. 17/576,911, filed on Jan. 14, 2022, granted, now 11,860,534.
Claims priority of provisional application 63/230,555, filed on Aug. 6, 2021.
Prior Publication US 2024/0094629 A1, Mar. 21, 2024
Int. Cl. G03F 1/62 (2012.01); G03F 1/24 (2012.01); G03F 1/64 (2012.01)
CPC G03F 1/62 (2013.01) [G03F 1/24 (2013.01); G03F 1/64 (2013.01)] 20 Claims
 
1. A method of manufacturing an EUV pellicle, comprising:
forming a network structure of nanotubes;
forming a 2D material layer over the network structure of nanotubes; and
forming a protection layer over the network structure of nanotubes.