US 12,265,322 B2
EUV mask blank and method of making EUV mask blank
Ping-Hsun Lin, Hsinchu (TW); Pei-Cheng Hsu, Hsinchu (TW); Ching-Fang Yu, Hsinchu (TW); Ta-Cheng Lien, Hsinchu (TW); Chia-Jen Chen, Hsinchu (TW); and Hsin-Chang Lee, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 4, 2023, as Appl. No. 18/365,757.
Application 18/365,757 is a continuation of application No. 17/481,673, filed on Sep. 22, 2021, granted, now 11,815,804.
Claims priority of provisional application 63/178,436, filed on Apr. 22, 2021.
Prior Publication US 2023/0375911 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/24 (2012.01)
CPC G03F 1/24 (2013.01) 20 Claims
 
1. An extreme ultraviolet (EUV) mask, comprising:
a substrate;
a pretreated multilayer stack on the substrate; and
an amorphous capping layer on the pretreated multilayer stack.