US 12,265,294 B2
Semiconductor apparatus, module, camera, and equipment
Hidemasa Oshige, Yokohama (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Nov. 14, 2023, as Appl. No. 18/509,151.
Application 18/509,151 is a continuation of application No. 17/511,100, filed on Oct. 26, 2021, granted, now 11,841,572.
Application 17/511,100 is a continuation of application No. 16/667,646, filed on Oct. 29, 2019, granted, now 11,181,767, issued on Nov. 23, 2021.
Claims priority of application No. 2018-205557 (JP), filed on Oct. 31, 2018.
Prior Publication US 2024/0085735 A1, Mar. 14, 2024
Int. Cl. G02F 1/1335 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01)
CPC G02F 1/133514 (2013.01) [G02F 1/133512 (2013.01); G02F 1/134336 (2013.01); G02F 1/136227 (2013.01)] 34 Claims
OG exemplary drawing
 
1. A semiconductor apparatus comprising:
a semiconductor device including an effective pixel region and a peripheral region on a substrate, the effective pixel region including an effective pixel having an organic EL element, the peripheral region being located in the periphery of the effective pixel region; and
a light transmission plate and a color filter layer provided to overlap the effective pixel region and the peripheral region in a plan view with respect to the substrate,
wherein the semiconductor device includes the substrate, the organic EL element, the color filter layer, and the light transmission plate arranged in this order,
wherein a first distance from the effective pixel region to at least a part of an outer edge of the color filter layer in the plan view is equal to or greater than 100 μm, and
wherein a second distance from an upper face of the color filter layer to a face closer to the color filter layer of the light transmission plate arranged on the effective pixel region in a direction perpendicular to a primary face of the substrate is greater than 0 μm, and
wherein the first distance is greater than or equal to twice the second distance.